As Silicon Carbide crystal growth expert with a proven track record at ONSEMI and AGP Technologies LLC., I excel in reactor operation and team leadership. Spearheaded innovative growth processes, enhancing crystal quality and market presence. Skilled in crucible design and multi-parameter optimization, my strategic vision and technical prowess drive industry-leading advancements.
38 scientific publications related to SiC growth technology material properties and device fabrication based on SiC
Process development for 200 mm Silicon Carbide bulk crystal growth. Fractography analysis and Characterization
Growth, characterization and selling 150 mm Silicon Carbide bulk crystals and wafers
Design and built PVT crystal growth reactor to provide seed wafers for HTCVD process
Provide technical expertise and growth parameters optimization for Silicon Carbide bulk growth process
Established Sterling Semiconductor Inc. company for SiC crystal production
Implemented basic SiC bulk crystal growth technology to produce 3-inch boules
Principal investigator for 3 BMDO projects with total grant of $ 3 millions
Created and implemented PVT growth process for SiC crystals
20 mm SiC bulk crystal were in production scale.
Initiate and signed Distribution Agreement with AphaTek Corp. (Japan) to introduce SiC wafers on Asian market