Angeline Smith

Senior Process Engineer with 8+ years of experience in semiconductor R&D at Intel, focusing on thin film ALD/PVD module development. Achievements include significant advancements in metal gate and contact processes, leading to improved yield and device performance. Strong background in applying empowering leadership to build highly effective teams, and contribute to innovative business development.

• 23+ US patents granted
• 2 Intel LTD Divisional Awards + multiple Area Recognition Awards
• Co-author of book chapters on magnetic devices in two books
• Author of 9+ peer reviewed journal publications

• US11411173B2, Perpendicular spin transfer torque devices with improved retention and thermal stability
• US11476412B2, Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory
• US11616192B2, Magnetic memory devices with a transition metal dopant at an interface of free magnetic layers and methods of fabrication
• US11770979B2, Conductive alloy layer in magnetic memory devices and methods of fabrication

• MRAM as Embedded Non-Volatile Memory Solution for 22FFL FinFET Technology, O. Golonzka et al. [co-author], 2018 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2018, 18.1.1-18.1.4, 10.1109/IEDM.2018.8614620
• 2 MB Array-Level Demonstration of STT-MRAM Process and Performance Towards L4 Cache Applications, J. G. Alzate et al. [co-author], 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2019, 2.4.1-2.4.4, 10.1109/IEDM19573.2019.8993474