Dmitri Lubyshev
Engineer
Bethlehem,PA
Summary
A highly efficient, detail-oriented specialist with more then 30 years of experience in epitaxial material growth, Designs of Experiments and material characterization.
Overview
28
28
years of professional experience
Work History
Principal Scientist
IQE-PA
07.2007 - Current
- Completed research projects on epi technology development for optoelectronic applications (ITAR compliant)
- Design of Experiments (DoE) with following technology transfer from R&D to mass-production for infra-red detectors and lasers
- Performed electrical, optical and structural material testing and analysis to improve device performance, reduce epitaxial defect density and increase production yield
- Wrote technical reports, participated in technical review for materials development and optimization, and other client deliverables
- Lead for mass-production epi growth on large capacity MBE reactors
- Wrote research papers, reports, and patent applications, participated in technical reviews
Project Scientist
IQE-PA
06.2005 - 07.2007
- Conducted DoE for epitaxial integration of III-V material with Silicon for micro wave and high frequency logic applications
- Epi technology developing for InP hetero juncton transistors, lasers and photodetectors
- Performed complex troubleshooting and assisted in leading initiatives to solve challenging scientific problems related to epi material quality and device performance
- Worked as member of integrated project team in highly collaborative work environment
- Learned new laboratory techniques and applied expertise in carrying out enhanced experiments with supervision of engineering lab members
Senior Research Engineer
IQE-PA
01.1999 - 06.2005
- Conduct DoE for epi-technoly development for metamorphic HEMT's, InP-based heterojunction transistors and laser structures
- Designed and build-up custom equipment for carbon tetrabromid doping for III-V mateials
Research Associate
The Pennsylvania State University
01.1998 - 01.1999
- R&D for carbon doping in III-V compounds using gas precursor carbon tetrabromid
Post Doctoral Associate
The Pennsylvania State University
02.1996 - 01.1998
- R&D with III-V epitaxial material growth for hetero junction bipolar transistors, lasers and photo detectors using Molecular Beam Epitaxy
Education
Ph.D. - Physics, Condensed Matter
Institute of Semiconductor Physics
Novosibirsk Russia05.1993
Bachelor of Science - Electrical Engineering
Ryazan Radio Technical Institute
Ryazan, Russia06.1982
Skills
- Lead Investigations, research and Design of Experiments
- Product Development
- Expert level in semiconductor material characterization including X-ray analysis, photo luminescence, electrical measurements and epi defects evaluation by TEM, SEM and optical microscopy
- Custom equipment design
- Staff Training
- Complex Problem-Solving
- Project Management
- Results Analysis
- Technical Writing (co-author of over 200 publications and 12 US patents)
Timeline
Principal Scientist
IQE-PA
07.2007 - Current
Project Scientist
IQE-PA
06.2005 - 07.2007
Senior Research Engineer
IQE-PA
01.1999 - 06.2005
Research Associate
The Pennsylvania State University
01.1998 - 01.1999
Post Doctoral Associate
The Pennsylvania State University
02.1996 - 01.1998
Ph.D. - Physics, Condensed Matter
Institute of Semiconductor Physics
Bachelor of Science - Electrical Engineering
Ryazan Radio Technical Institute
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