Mario Morales

Process: We grow GaP, GaAs, InP on VG-Semicon

(MBE) Molecular Beam Epitaxy and (MOVPE)

Metal-Organic Vapor Phase Epitaxy G4 Aixtron.

Metrology: Characterization include Surf Scan, XRD,

Photoluminescence and microscope. Hall

Measurements, Electrochemical C-V Profiler.

Maintenance: Build Filter cart, Ball valve, leak check,

source change, weekly rounds and assist PM on Aixtron.

Works at InGaN epi area, operate Veeco K465 GaN MOCVD and Aixtron 2800G4 IC. MES and

characterization PL system and 8620 candela tool.

We do partial maintenance, changing ceiling quartz,

cover plate, and satellite. Reactor daily rounds, cleaning

dirty reactor parts.

Process include GaAs and InP wafers in Metalization sputter area. Certified in CVC 611, PVI LL 800, AST 10 MA Alloy and Alpha Step Tencor 500. Mirror Coating area,

PLS 570, Eddy Coater, Ellipsometer, Spectrophotometer

and Shimadzu UV 1601/3101. Epi reactor, characterization

include Surf Scan, Bio Rad, Filmtek 1000 and X-ray.