ZHENENG ZHANG

Ph.D. candidate in Physics (OSU, expected 2025) with a strong foundation in semiconductor physics, nanofabrication, and materials characterization. Expert in lithography, RIE, SEM, AFM, deposition, cryogenic transport measurements, and failure analysis. Seeking a Research Scientist position to apply experimental expertise and solve complex problems in semiconductor materials and devices.

Hinge and Surface Conduction in Quasi-1D Topological Insulators 

Advisor: Prof. ChunNing Lau, OSU

Discovered gate-tunable ambipolar conduction in Bi4I4 FETs; demonstrated surface/hinge transport & gate-tunable supercurrent. Engineered high-quality Bi4Br4 FETs, optimizing material and device fabrication techniques; discovered Coulomb blockades in quasi-1D topological insulators.

Quantum Twist Microscopy of Moiré Heterostructures 

Advisor: Prof. ChunNing Lau, OSU

Developed a quantum twist microscopy by integrating custom AFM cantilevers with conventional microscopes.

• Z. Zhang, J. Wang & C. Lau. "Mixed Dimensional Transport in Bi4Br4 FETs." In preparation (2025).
• Liu, Y., Chen, R., Zhang, Z., et al. Nano Letters 22, 1151–1158 (2022).
• Matsuura, K., Roppongi, M., Qiu, M., Zhang, Z., et al. PNAS 120, e2208276120 (2023).

• CEM Scholar, OSU (2025) | University Fellowship , OSU (2019–2020)
• Outstanding Undergraduate Thesis, Zhejiang University (2019)