Nai-Wen Hsu

• Texas Instrument 4Q22 TSR Role Evolution Award, Qualified sales achievements and elected by Sales Area Director and Sales Managers
• NTU GIEE Best Thesis Award
• CIEE Best Student Thesis Award 2nd Prize
• Presidential Award in NTU, Ranking top 5% in a single semester
• TSMC– NTU Research Center Full Scholarship, 7 semesters

C/C++, Python, Matlab, Verilog, PSPICE, COMSOL, AutoCAD, ARM Cortex-M, Raspberry Pi, Photolithography, Etching, Deposition, Demand creation, Sales operations, Product promoting, Customer relationship management, Internal and external cross-team communication

Vice Director, NTU Children Cancer Service Club, 02/01/16, 07/01/16

Flash memory device and method thereof, Nai-Wen Hsu, Wei-Chih Hou, Yu-Jui Wu, Hsiang-Shun Kao, C. T. Harris, T. M. Lu, Jiun-Yun Li, USP12051756, 01/01/23, Temperature dependence of charge distributions and carrier mobility in an undoped Si/SiGe heterostructure, Nai-Wen Hsu, Wei-Chih Hou, Yu-Jui Wu, Hsiang-Shun Kao, C. T. Harris, T. M. Lu, Jiun-Yun Li, IEEE Transactions on Electron Devices, 69, 2, 482-486, 02/01/22, Cryogenic Si/SiGe heterostructure flash memory devices, Wei-Chih Hou, Nai-Wen Hsu, Tz-Ming Wang, Chia-You Liu, Hsiang-Shun Kao, Miin-Jang Chen, Jiun-Yun Li, ACS Applied Electronic Materials, 4, 6, 2879-2884, 06/01/22, Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure, D. Chen, S. Cai, Nai-Wen Hsu, S. H. Huang, Yen Chuang, E. Nielsen, Jiun-Yun Li, C. W. Liu, T. M. Lu, D. Laroche, Applied Physics Letters, 119, 22, 223103, 11/01/21, Temperature dependence of DC transport characteristics for a two-dimensional electron gas in an undoped Si/SiGe heterostructure, Kuan-Yu Chou, Nai-Wen Hsu, Yi-Hsin Su, Chung-Tao Chou, Po-Yuan Chou, Yen Chuang, Jiun-Yun Li, Applied Physics Letters, 112, 8, 083502, 02/01/18, Modulation of Turn-On Voltage in Undoped Si/SiGe Heterostructure Insulated-Gate Field-Effect Transistors (IGFETs) for Cryogenic Memory Applications, Nai-Wen Hsu, Tz-Ming Wang, Chia-Tse Tai, Charles Thomas Harris, Tzu-Ming Lu, Jiun-Yun Li, 2019 2nd joint International SiGe Technology and Device Meeting (ISTDM)/International Conference on Silicon Epitaxy and Heterostructures (ICSI), Madison, WI, U.S.A., 06/02/19, C-V Characteristics of Undoped Si/SiGe Heterostructure Insulated-Gate Field-Effect Transistors, Nai-Wen Hsu, Tz-Ming Wang, Chia-Tse Tai, Charles Thomas Harris, Tzu-Ming Lu, Jiun-Yun Li, 2019 2nd joint International SiGe Technology and Device Meeting (ISTDM)/International Conference on Silicon Epitaxy and Heterostructures (ICSI), Madison, WI, U.S.A., 06/02/19, First experimental demonstration of a two-dimensional electron gas (2DEG) in a strained Ge quantum well, Nai-Wen Hsu, Po-Yuan Chiu, Chung-Tao Chou, Yen Chuang, Chia-You Liu, C. T. Harris, Tzu-Ming Lu, Jiun-Yun Li, 2018 eMRS Spring Meeting, Strasbourg, France, 06/18/18, Density dependence of the excitation gap in Si/SiGe bilayers, D. Chen, S. Cai, Nai-Wen Hsu, S. H. Huang, Yen Chuang, Jiun-Yun Li, C. W. Liu, T. M. Lu, D. Laroche, 2021 APS March Meeting Session F46, Virtual, 03/15/21